DC characteristics of MOVPE-grown Npn InGaP/InGaAsN DHBTs

Author

Li, N.Y. ; Chang, P.C. ; Baca, A.G. ; Xie, X.M. ; Sharps, P.R. ; Hou, H.Q.

Author_Institution

Emcore Photovoltaics, Emcore Corp., Albuquerque, NM, USA

Volume

36

Issue

1

fYear

2000

fDate

1/6/2000 12:00:00 AM

Firstpage

81

Lastpage

83

Abstract

The authors have demonstrated, for the first time, a functional Npn double heterojunction bipolar transistor using a novel material, InGaAsN, with a bandgap energy of 1.2 eV as the p-type base layer. A 300 Å thick In_xGa_1-xAs graded layer was introduced to reduce the conduction band offset at the p-type InGaAsN base and n-type GaAs collector junction. For an emitter size of 500 μm², a peak current gain of 5.3 has been achieved

Keywords

III-V semiconductors; MOCVD; energy gap; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; low-power electronics; semiconductor device measurement; semiconductor growth; 1.2 eV; DC characteristics; Gummel plot; In_xGa_1-xAs graded layer; InGaAs; InGaP-InGaAsN; MOVPE growth; Npn InGaP/InGaAsN DHBTs; bandgap energy; conduction band offset; emitter size; functional Npn double heterojunction bipolar transistor; ideality factors; low power electronics; n-type GaAs collector junction; p-type base layer; peak current gain;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:20000024

Filename

830535