DocumentCode
1316940
Title
Gain-switching of GaInN multiquantum well laser diodes
Author
Marinelli, C. ; Khrushchev, I.Y. ; Rorison, J.M. ; Penty, R.V. ; White, I.H. ; Kaneko, Y. ; Watanabe, S. ; Yamada, N. ; Takeuchi, T. ; Amano, Hideharu ; Akasaki, I. ; Hasnain, G. ; Schneider, R. ; Wang, S.Y. ; Tan, M.R.T.
Author_Institution
Centre for Commun. Res., Bristol Univ., UK
Volume
36
Issue
1
fYear
2000
fDate
1/6/2000 12:00:00 AM
Firstpage
83
Lastpage
84
Abstract
An investigation into the emission and degradation characteristics of GaInN multiquantum well lasers driven by short, high current pulses for both the time and spectral domains is presented. Sub-nanosecond optical pulses with peak powers exceeding 450 mW and gain-switched pulses shorter than 50 ps have been generated
Keywords
III-V semiconductors; gallium compounds; indium compounds; optical pulse generation; quantum well lasers; semiconductor quantum wells; wide band gap semiconductors; 100 mW; 350 pJ; 450 mW; 50 ps; GaInN; GaInN multiquantum well laser diodes; degradation characteristics; emission characteristics; gain-switched pulses; gain-switching; peak power; short high current pulses; spectral domain; sub-nanosecond optical pulse generation; time domain;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20000130
Filename
830536
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