Title :
High electron mobility InGaAs-GaAs field effect transistor with thermally oxidised AlAs gate insulator
Author :
DeMelo, C.B. ; Hall, D.C. ; Snider, G.L. ; Xu, D. ; Kramer, G. ; El-Zein, N.
Author_Institution :
Dept. of Electr. Eng., Notre Dame Univ., IN, USA
fDate :
1/6/2000 12:00:00 AM
Abstract :
A GaAs-based high electron mobility metal-oxide-semiconductor field effect transistor (MOSFET) is fabricated using wet thermal oxidation of AlAs. Enhanced transport properties and interface smoothness result from use of a pseudomorphic In0.2Ga0.8 As channel layer, yielding a high transconductance of 50 mS/mm (5 μm gate length)
Keywords :
III-V semiconductors; MOSFET; gallium arsenide; high electron mobility transistors; indium compounds; interface roughness; leakage currents; oxidation; 5 mum; 50 mS/mm; AlAs; In0.2Ga0.8As-GaAs; InGaAs-GaAs high electron mobility MOSFET; enhanced transport properties; gate leakage current; gate length; gate oxide formation; high transconductance; interface smoothness; lateral wet thermal oxidation; pseudomorphic In0.2Ga0.8As channel layer; thermally oxidised AlAs gate insulator;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20000026
