Improvement of β-SiC/Si pn diode high temperature characteristics with porous silicon layer

Author

Hsieh, Wen-Tse ; Fang, Yean-Kuen ; Lee, W.J. ; Ho, Chi-Wei ; Wu, Kuen-Hsien ; Ho, Jyh-Jier ; Hwang, Jun-Dar

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan

Volume

36

Issue

1

fYear

2000

fDate

1/6/2000 12:00:00 AM

Firstpage

86

Lastpage

87

Abstract

It is demonstrated experimentally that the β-SiC/Si pn diode high temperature characteristics can be improved by adding a porous silicon layer on the interface of β-SiC/Si. The reverse breakdown voltage can be increased from 3 to 16 V at room temperature and from 2 to 11 V at 100°C and the rectifying characteristic of the pn diode was extended from 125 to 200°C. The significant improvement is attributed to the suppression of the leakage current due to the inherent high resistivity and the flexibility of the porous silicon material

Keywords

anodisation; high-temperature electronics; leakage currents; porous semiconductors; rectification; semiconductor device breakdown; semiconductor diodes; silicon; silicon compounds; wide band gap semiconductors; β-SiC/Si pn diode; 11 V; 16 V; 25 to 200 C; SiC-Si; electrochemical anodisation; high resistivity; high temperature characteristics improvement; leakage current suppression; material flexibility; porous Si layer; rectifying characteristic; reverse breakdown voltage;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:20000019

Filename

830538