DocumentCode :
1316962
Title :
Low-resistivity p-side contacts for InP-based devices using buried InGaAs tunnel junction
Author :
Arzberger, M. ; Lohner, M. ; Böhm, G. ; Amann, M.-C.
Author_Institution :
Walter Schottky Inst., Tech. Univ. Munchen, Germany
Volume :
36
Issue :
1
fYear :
2000
fDate :
1/6/2000 12:00:00 AM
Firstpage :
87
Lastpage :
88
Abstract :
A lattice-matched p+/n+-InGaAs tunnel junction for use in the realisation of low-resistivity p-side contacts for InP-based optoelectronic devices is investigated. Test structures with heavily doped n+/p+ (~1020 cm-3) InGaAs layers grown by solid-source molecular beam epitaxy show ohmic behaviour and very low specific contact resistivities of ~3×106 Ω cm2
Keywords :
III-V semiconductors; buried layers; contact resistance; gallium arsenide; heavily doped semiconductors; indium compounds; light emitting diodes; molecular beam epitaxial growth; ohmic contacts; p-n heterojunctions; semiconductor doping; surface emitting lasers; InGaAs:Si-InGaAs:Be-InAlAs:Be-InP:Zn; InP; InP-based optoelectronic devices; LED; VCSEL; buried InGaAs tunnel junction; circular point contacts; heavily doped n+/p+ InGaAs layers; lateral current confinement; lattice-matched p+/n+-InGaAs tunnel junction; low specific contact resistivities; low-resistivity p-side contacts; ohmic behaviour; solid-source molecular beam epitaxy; test structures;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:20000039
Filename :
830539
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1316962
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