Low-resistivity p-side contacts for InP-based devices using buried InGaAs tunnel junction

Author

Arzberger, M. ; Lohner, M. ; Böhm, G. ; Amann, M.-C.

Author_Institution

Walter Schottky Inst., Tech. Univ. Munchen, Germany

Volume

36

Issue

1

fYear

2000

fDate

1/6/2000 12:00:00 AM

Firstpage

87

Lastpage

88

Abstract

A lattice-matched p⁺/n⁺-InGaAs tunnel junction for use in the realisation of low-resistivity p-side contacts for InP-based optoelectronic devices is investigated. Test structures with heavily doped n⁺/p⁺ (~10²⁰ cm^-3) InGaAs layers grown by solid-source molecular beam epitaxy show ohmic behaviour and very low specific contact resistivities of ~3×10⁶ Ω cm²

Keywords

III-V semiconductors; buried layers; contact resistance; gallium arsenide; heavily doped semiconductors; indium compounds; light emitting diodes; molecular beam epitaxial growth; ohmic contacts; p-n heterojunctions; semiconductor doping; surface emitting lasers; InGaAs:Si-InGaAs:Be-InAlAs:Be-InP:Zn; InP; InP-based optoelectronic devices; LED; VCSEL; buried InGaAs tunnel junction; circular point contacts; heavily doped n⁺/p⁺ InGaAs layers; lateral current confinement; lattice-matched p⁺/n⁺-InGaAs tunnel junction; low specific contact resistivities; low-resistivity p-side contacts; ohmic behaviour; solid-source molecular beam epitaxy; test structures;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:20000039

Filename

830539