• DocumentCode
    1316967
  • Title

    High-performance algorithmic switched-current memory cell

  • Author

    Toumazou, Christofer ; Battersby, N.C. ; Maglaras, C.

  • Author_Institution
    Dept. of Electr. Eng., Imperial Coll. of Sci., Technol. & Med., London, UK
  • Volume
    26
  • Issue
    19
  • fYear
    1990
  • Firstpage
    1593
  • Lastpage
    1595
  • Abstract
    A new high-performance algorithmic switched-current memory cell with greatly improved charge injection performance is described. The new cell uses algorithmic means to achieve an improvement in charge injection of two orders of magnitude and does not rely on matching.
  • Keywords
    CMOS integrated circuits; circuit analysis computing; integrated memory circuits; CMOS process; HSPICE; charge injection performance; computer simulation; high-performance algorithmic switched-current memory cell; semiconductor storage;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19901021
  • Filename
    83054