DocumentCode
1316974
Title
Photoenhanced electrochemical etching for p-GaN
Author
Yang, Jeon-Wook ; Kim, Byung-Mok ; Yoon, Chang-Joo ; Yang, Gye-Mo ; Lee, Hyung-Jae
Author_Institution
Dept. of Semicond. Sci. & Technol., Chonbuk Nat. Univ., Chonju, South Korea
Volume
36
Issue
1
fYear
2000
fDate
1/6/2000 12:00:00 AM
Firstpage
88
Lastpage
90
Abstract
An effective wet chemical etching method for p-GaN is proposed based on the surface band bending of the semiconductor. The metal organic chemical vapour deposition (MOCVD) grown p-GaN was successfully etched by biasing the substrate below -3 V during photoenhanced electrochemical etching using KOH solution and Hg lamp illumination. The etch rate increased with increasing negative voltage and was as high as 2.1 μm/min at -10 V
Keywords
III-V semiconductors; MOCVD coatings; etching; gallium compounds; photoelectrochemistry; surface states; wide band gap semiconductors; -3 to -10 V; GaN; Hg lamp illumination; KOH; KOH solution; MOCVD growth; etch rate; negative voltage; p-GaN; photoenhanced electrochemical etching; substrate biasing; surface band bending; wet chemical etching method;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20000036
Filename
830540
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