• DocumentCode
    1316987
  • Title

    Normally-off operation AlGaN/GaN MOS-HEMT with high threshold voltage

  • Author

    Chang, Chao-Tsun ; Hsu, T.-H. ; Chang, Edward Yi ; Chen, Yen-Chi ; Trinh, H.-D. ; Chen, Kevin J.

  • Author_Institution
    Dept. of Mater. Sci. & Eng., Nat. Chiao-Tung Univ., Hsinchu, Taiwan
  • Volume
    46
  • Issue
    18
  • fYear
    2010
  • fDate
    9/1/2010 12:00:00 AM
  • Firstpage
    1280
  • Lastpage
    1281
  • Abstract
    Normally-off operation AlGaN/GaN high electron mobility transistors have been developed utilising a fluorine-based treatment technique combined with a metal-oxide-semiconductor gate architecture. Threshold voltage as high as 5.1 V was achieved by using an 16 nm-thick Al2O3 gate oxide film. Additionally, the device performed a drain current density of 500 mA/mm and a peak transconductance of 100 mS/mm, which are comparable to the conventional normally-on devices.
  • Keywords
    III-V semiconductors; MOSFET; aluminium compounds; gallium compounds; high electron mobility transistors; Al2O3; AlGaN-GaN; fluorine-based treatment technique; high electron mobility transistors; metal-oxide-semiconductor gate architecture; normally-off operation MOS-HEMT; size 16 nm; voltage 5.1 V;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.2010.1939
  • Filename
    5567059
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1316987