Ultrafast coherent all-optical switching in quantum-well semiconductor microcavity

Author

De Matos, C. ; Pugnet, M. ; Le Corre, A.

Author_Institution

Lab. d´´Analyse et d´´Archit. des Syst., CNRS, Toulouse, France

Volume

36

Issue

1

fYear

2000

fDate

1/6/2000 12:00:00 AM

Firstpage

93

Lastpage

94

Abstract

Picosecond degenerate four-wave mixing experiments at room temperature in a GaInAs-GaInAsP multiple quantum well embedded in a microcavity are presented. An input diffraction efficiency of 2% with only 1 μJ/cm² pump fluence is achieved. The authors show that the diffraction phenomenon is ultrafast and coherent. For a photon energy 30 meV below the exciton band edge and for low pump intensities (1 μJ/cm²), the diffraction phenomenon is not perturbed by strong and spatially uniform pump pulse pre-illumination. This result demonstrates the potential of semiconductor microcavities for the realisation of ultrafast, sensitive and coherent devices

Keywords

Fabry-Perot resonators; III-V semiconductors; Stark effect; gallium arsenide; high-speed optical techniques; indium compounds; microcavity lasers; multiwave mixing; optical switches; quantum well lasers; semiconductor quantum wells; 2 percent; Fabry-Perot microcavity; GaInAs-GaInAsP; GaInAs-GaInAsP MQW microcavity; exciton band edge; input diffraction efficiency; low pump intensity; optical Stark effect; photon energy; picosecond degenerate four-wave mixing; pump fluence; room temperature; semiconductor microcavities; spatially uniform pump pulse pre-illumination; ultrafast coherent all-optical switching; ultrafast coherent diffraction phenomenon;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:20000118

Filename

830543