DocumentCode
1317038
Title
Room temperature vertical cavity GaAs/AlGaAs surface emitting injection laser
Author
Wuthrich, C. ; James, J.H. ; Ganiere, J.D. ; Reinhart, F.K.
Author_Institution
Inst. of Micro & Opt., Dept. of Phys., Swiss Federal Inst. of Technol., Lausanne, Switzerland
Volume
26
Issue
19
fYear
1990
Firstpage
1600
Lastpage
1601
Abstract
A vertical cavity GaAs/AlGaAs top surface emitting injection laser (SEIL) has been fabricated using a simple planar technology. The laser has a low series resistance (40 Omega ) and works at room temperature in pulsed operation with a duty cycle up to 35% and a threshold current of 55 mA. The authors obtained monomode operation at 896 nm wavelength, with a linewidth less than 1.5 AA. Both single SEILs and two dimensional SEIL arrays has been fabricated.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; laser cavity resonators; semiconductor junction lasers; 40 ohm; 55 mA; 896 nm; Fabry Perot cavity; GaAs-AlGaAs surface emitting injection laser; duty cycle; linewidth; planar technology; pulsed operation; room temperature vertical cavity laser; semiconductor lasers; series resistance; threshold current; two dimensional SEIL arrays;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19901025
Filename
83058
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