Title :
Heterojunction field effect transistor laser
Author :
Suzuki, Yuya ; Yajima, Hiroya ; Shimoyama, Koji ; Inoue, Yasuyuki ; Katoh, Masahiro ; Gotoh, H.
Author_Institution :
Opt. Inf. Sect., Electrotech. Lab., Ibaraki, Japan
Abstract :
A successful demonstration of a heterojunction field effect transistor laser is described. A typical threshold current of 45 mA in a laser mode and a transconductance of 62 mS in a FET mode are obtained for the same device.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; integrated optoelectronics; junction gate field effect transistors; semiconductor junction lasers; 45 mA; 62 mS; GaAs-AlGaAs; HJFET; OEIC; demonstration; heterojunction field effect transistor laser; laser mode; threshold current; transconductance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19901046
