Title :
Polarity dependence of charge to breakdown and interface state generation of oxynitride gate dielectrics prepared by rapid thermal processing
Author :
Joshi, A.B. ; Lo, G.Q. ; Kwong, D.L. ; Xie, J.
Author_Institution :
Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA
Abstract :
MOS devices were fabricated with dry thermal oxides, nitrided oxides and annealed nitrided oxides. The anneals were performed in O2 or N2 ambients using rapid thermal processing. Charge to breakdown, Qbd, and interface state generation, Delta Dit, for these devices were studied using Fowler-Nordheim electron injection. The gate bias polarity dependence of Qbd and Delta Dit was investigated. A model is proposed to explain the observed dependence of these quantities on the polarity of injection and process parameters.
Keywords :
dielectric thin films; electric breakdown of solids; incoherent light annealing; interface electron states; metal-insulator-semiconductor devices; silicon compounds; Fowler-Nordheim electron injection; MOS devices; N 2; O 2; Si-SiO 2; Si-SiO xN y; VLSI; annealed nitrided oxides; charge to breakdown; dry thermal oxides; gate bias polarity dependence; injection polarity; interface state generation; model; nitrided oxides; oxynitride gate dielectrics; process parameters; rapid thermal processing;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19901118
