DocumentCode :
1317198
Title :
High peak-to-valley current ratio AlGaAs/AlAs/GaAs double barrier resonant tunnelling diodes
Author :
Reddy, Viswanath K. ; Tsao, A.J. ; Neikirk, D.P.
Author_Institution :
Microelectron. Res. Center, Texas Univ., Austin, TX, USA
Volume :
26
Issue :
21
fYear :
1990
Firstpage :
1742
Lastpage :
1744
Abstract :
A double barrier resonant tunnelling diode with the highest room temperature peak-to-valley current ratio using AlxGa1-xAs/GaAs quantum wells is reported. Room temperature peak-to-valley ratios of 6.3 were obtained using an Al0.2Ga0.8As ´chair´ barrier. Peak current density for these diodes was typically 30 kA/cm2.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor quantum wells; tunnel diodes; Al 0.2Ga 0.8As ´chair´ barrier; Al xGa 1-xAs/GaAs quantum wells; AlGaAs-AlAs-GaAs double barrier resonant tunnelling diodes; peak current density; room temperature peak-to-valley current ratio;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19901119
Filename :
83086
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1317198
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