Title :
Low threshold current GaInAs/AlInAs ridge MQW lasers with InP cladding layers
Author :
Kawamura, Y. ; Nonaka, K. ; Mikami, O.
Author_Institution :
NTT Optoelectron Labs., Kanagawa, Japan
fDate :
5/12/1988 12:00:00 AM
Abstract :
GaInAs/AlInAs ridge MQW lasers with InP cladding layers were fabricated by molecular beam epitaxy. The threshold current is as low as 60 mA and the lasing wavelength is 1.52 μm under pulsed conditions. The use of InP cladding layers made it possible to realise narrow-stripe-width ridge MQW lasers with low threshold currents. The characteristic temperature T0 is 88 K, which was greater than those reported for GaInAsP double heterostructure lasers in the 1.5 μm wavelength region
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; molecular beam epitaxial growth; semiconductor growth; semiconductor junction lasers; 1.52 micron; 60 mA; 88 K; GaInAs-AlInAs; InP cladding layers; characteristic temperature; lasing wavelength; molecular beam epitaxy; pulsed conditions; ridge MQW lasers; semiconductor laser; threshold current;
Journal_Title :
Electronics Letters
