Title :
High power operation of GaInAsP/GaInAs MQW ridge lasers emitting at 1.48 mu m
Author :
Glew, R.W. ; Greene, P.D. ; Henshall, G.D. ; Whiteaway, J.E.A.
Abstract :
Multi-quantum-well (MQW) ridge lasers have been produced with CW light outputs in excess of 100 mW at 500 mA. The wavelength of operation is 1480 nm and the lasers are suitable for pumping erbium-doped-fibre amplifiers. These are the highest power ridge lasers yet produced in the 1500 nm wavelength region.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; optical waveguides; semiconductor junction lasers; 100 mW; 1480 nm; 500 mA; CW light outputs; CW output power; GaInAsP-GaInAs; MQW ridge lasers; erbium-doped-fibre amplifiers; high power operation; operation wavelength; ridge waveguide lasers; wavelength region;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19901127
