Title :
Novel AlInAsSb/InGaAs double-barrier resonant tunneling diode with high peak-to-valley current ratio at room temperature
Author :
Su, Yan-Kuin ; Chang, Jia-Rong ; Lu, Yan-Ten ; Lin, Chuing-Liang ; Wu, Kuo-Ming ; Wu, Zheng-Xian
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
fDate :
4/1/2000 12:00:00 AM
Abstract :
We demonstrate a novel Al/sub 0.66/In/sub 0.34/As/sub 0.85/Sb/sub 0.15/-In/sub 0.53/Ga/sub 0.47/As double-barrier resonant tunneling diode grown by metalorganic vapor phase epitaxy. A high peak-to-valley current ratio of 46 and a peak current density of 22 kA/cm/sup 2/ were obtained at room temperature.
Keywords :
III-V semiconductors; aluminium compounds; current density; gallium arsenide; indium compounds; resonant tunnelling diodes; semiconductor growth; vapour phase epitaxial growth; Al/sub 0.66/In/sub 0.34/As/sub 0.85/Sb/sub 0.15/-In/sub 0.53/Ga/sub 0.47/As; AlInAsSb/InGaAs DBRTD; MOVPE; double-barrier RTD; metalorganic vapor phase epitaxy; peak-to-valley current ratio; resonant tunneling diode; Analog-digital conversion; Current density; Diodes; Epitaxial growth; Frequency conversion; Heterojunctions; Indium gallium arsenide; Indium phosphide; Resonant tunneling devices; Temperature;
Journal_Title :
Electron Device Letters, IEEE
