Monte Carlo study of the dynamic breakdown effects in HEMT´s

Author

Di Carlo, Aldo ; Rossi, Lorenzo ; Lugli, Paolo ; Zandler, Günther ; Meneghesso, Gaudenzio ; Jackson, Mike ; Zanoni, Enrico

Author_Institution

Dipt. di Ingegneria Elettronica, Rome Univ., Italy

Volume

21

Issue

4

fYear

2000

fDate

4/1/2000 12:00:00 AM

Firstpage

149

Lastpage

151

Abstract

We present a theoretical investigation of the near-breakdown scenario in pseudomorphic high electron mobility transistors (HEMT´s). We show that the main mechanism for the enhanced drain current is a parasitic bipolar effect due to holes, generated by impact ionization, which accumulate in the channel and in the substrate close to the source contact. The dynamic of this charge accumulation and of the consequent drain current increase is studied by means of a two-dimensional (2-D) Poisson Monte Carlo simulator.

Keywords

Monte Carlo methods; high electron mobility transistors; impact ionisation; semiconductor device breakdown; semiconductor device models; 2D Poisson Monte Carlo simulator; charge accumulation; drain current enhancement; dynamic breakdown effects; high electron mobility transistors; impact ionization generated holes; near-breakdown scenario; parasitic bipolar effect; pseudomorphic HEMT; source contact; Breakdown voltage; Charge carrier processes; Electric breakdown; Gallium arsenide; HEMTs; Heterojunctions; Impact ionization; MESFETs; Monte Carlo methods; Two dimensional displays;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.830964

Filename

830964