• DocumentCode
    1317408
  • Title

    Solid state: Molecular beam epitaxy: Streams of molecules in a vacuum chamber build devices ‘from the atom up’

  • Author

    Panish, Morton G. ; Cho, Alfred Y.

  • Author_Institution
    Bell Labs., Murray Hill, NJ, USA
  • Volume
    17
  • Issue
    4
  • fYear
    1980
  • fDate
    4/1/1980 12:00:00 AM
  • Firstpage
    18
  • Lastpage
    23
  • Abstract
    After years of research, molecular beam epitaxy (MBE), a process for forming thin, single-crystal semiconductor structures in an ultrahigh vacuum, is beginning to pay dividends. Microwave field-effect transistors, semiconductor lasers, millimeter-wave detectors, and a variety of other high-performance devices have been made from the multilayer crystals grown by the process. A greater variety of devices and still higher performance can be expected.
  • fLanguage
    English
  • Journal_Title
    Spectrum, IEEE
  • Publisher
    ieee
  • ISSN
    0018-9235
  • Type

    jour

  • DOI
    10.1109/MSPEC.1980.6330288
  • Filename
    6330288