DocumentCode :
1317408
Title :
Solid state: Molecular beam epitaxy: Streams of molecules in a vacuum chamber build devices ‘from the atom up’
Author :
Panish, Morton G. ; Cho, Alfred Y.
Author_Institution :
Bell Labs., Murray Hill, NJ, USA
Volume :
17
Issue :
4
fYear :
1980
fDate :
4/1/1980 12:00:00 AM
Firstpage :
18
Lastpage :
23
Abstract :
After years of research, molecular beam epitaxy (MBE), a process for forming thin, single-crystal semiconductor structures in an ultrahigh vacuum, is beginning to pay dividends. Microwave field-effect transistors, semiconductor lasers, millimeter-wave detectors, and a variety of other high-performance devices have been made from the multilayer crystals grown by the process. A greater variety of devices and still higher performance can be expected.
fLanguage :
English
Journal_Title :
Spectrum, IEEE
Publisher :
ieee
ISSN :
0018-9235
Type :
jour
DOI :
10.1109/MSPEC.1980.6330288
Filename :
6330288
Link To Document :
بازگشت