DocumentCode
1317408
Title
Solid state: Molecular beam epitaxy: Streams of molecules in a vacuum chamber build devices ‘from the atom up’
Author
Panish, Morton G. ; Cho, Alfred Y.
Author_Institution
Bell Labs., Murray Hill, NJ, USA
Volume
17
Issue
4
fYear
1980
fDate
4/1/1980 12:00:00 AM
Firstpage
18
Lastpage
23
Abstract
After years of research, molecular beam epitaxy (MBE), a process for forming thin, single-crystal semiconductor structures in an ultrahigh vacuum, is beginning to pay dividends. Microwave field-effect transistors, semiconductor lasers, millimeter-wave detectors, and a variety of other high-performance devices have been made from the multilayer crystals grown by the process. A greater variety of devices and still higher performance can be expected.
fLanguage
English
Journal_Title
Spectrum, IEEE
Publisher
ieee
ISSN
0018-9235
Type
jour
DOI
10.1109/MSPEC.1980.6330288
Filename
6330288
Link To Document