• DocumentCode
    1317409
  • Title

    Transistor off-state leakage current induced by TiSi2 pre-amorphizing implant in a 0.20 μm CMOS process

  • Author

    Lutze, Jeffrey ; Scott, Greg ; Manley, Martin

  • Author_Institution
    Technol. Dev. Group, Philips Semicond., San Jose, CA, USA
  • Volume
    21
  • Issue
    4
  • fYear
    2000
  • fDate
    4/1/2000 12:00:00 AM
  • Firstpage
    155
  • Lastpage
    157
  • Abstract
    We report on an anomalous off-state leakage current found in NMOS devices fabricated with a pre-amorphizing (PA) implant before titanium silicide formation. We present data which indicates that the leakage current is caused by channeling of the arsenic PA implant through the polysilicon gate. An angled PA implant is shown to prevent the channeling and allow the fabrication of well-behaved devices with low resistance titanium silicide.
  • Keywords
    CMOS integrated circuits; integrated circuit metallisation; ion implantation; leakage currents; titanium compounds; 0.2 micron; As implant; NMOS devices; TiSi/sub 2/ pre-amorphizing implant; TiSi/sub 2/-Si:As; angled implant; anomalous leakage current; channeling prevention; device fabrication; low resistance titanium silicide; polysilicon gate; submicron CMOS process; transistor offstate leakage current; CMOS process; CMOS technology; Fabrication; Implants; Leakage current; MOS devices; Robustness; Scattering; Silicides; Titanium;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/55.830966
  • Filename
    830966
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1317409