Integrated packaging of over 100 GHz bandwidth uni-traveling-carrier photodiodes

Author

Royter, Yakov ; Furuta, Tomofumi ; Ksdama, S. ; Sahri, Nabil ; Nagatsuma, Tadao ; Ishibashi, Tadao

Author_Institution

NTT Telecommun. Energy Labs., Kanagawa, Japan

Volume

21

Issue

4

fYear

2000

fDate

4/1/2000 12:00:00 AM

Firstpage

158

Lastpage

160

Abstract

Hybrid packaging techniques, in which the device substrate is different from the package substrate, and wire bonding or solder interconnections are used, are inadequate for ultrahigh-speed (>100 GHz) wideband applications. By employing wafer-bonding techniques, an integrated packaging (IP) technology was developed, in which devices are fabricated directly on the package substrate, and the interconnections are made as a part of the device fabrication process. This IP process was used to fabricate uni-traveling-carrier photodiodes (UTC-PD´s) integrated with millimeter-wave coplanar waveguides (CPW) on package compatible sapphire with high yield. The performance of wafer-bonded UTC-PD´s with 3-dB bandwidth of 102 GHz was similar to that of conventional devices, and the CPW´s exhibited low dispersion.

Keywords

coplanar waveguides; photodiodes; sapphire; semiconductor device packaging; wafer bonding; 102 GHz; Al/sub 2/O/sub 3/; MM-wave coplanar waveguides; integrated packaging; millimeter-wave CPW; package compatible sapphire; package substrate; ultrahigh-speed applications; uni-traveling-carrier photodiodes; wafer-bonding techniques; wideband applications; Bandwidth; Electronics packaging; Epitaxial layers; Fabrication; Indium phosphide; Millimeter wave technology; Photodiodes; Semiconductor device packaging; Substrates; Wafer bonding;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.830967

Filename

830967