DocumentCode
1317448
Title
Effect of polysilicon gate type on the flatband voltage shift for ultrathin oxide-nitride gate stacks
Author
Wang, Zhigang ; Parker, Chris G. ; Hodge, Dexter W. ; Croswell, Robert T. ; Yang, Nian ; Misra, Veena ; Hauser, John R.
Author_Institution
Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA
Volume
21
Issue
4
fYear
2000
fDate
4/1/2000 12:00:00 AM
Firstpage
170
Lastpage
172
Abstract
In this work, we demonstrate that the magnitude of flatband voltage (V/sub FB/) shift for ultrathin (<2 nm) silicon dioxide-silicon nitride (ON) gate stacks in MOSFET´s depends on the Fermi level position in the gate material. In addition, a fixed positive charge at the oxide-nitride interface was observed.
Keywords
Fermi level; MOSFET; dielectric thin films; 2 nm; Fermi level position; SiO/sub 2/-Si/sub 3/N/sub 4/; fixed positive charge; flatband voltage shift; gate material; oxide-nitride interface; polysilicon gate type; ultrathin oxide-nitride gate stacks; Annealing; Boron; CMOS technology; Dielectric materials; Furnaces; MOSFET circuits; Permittivity; Plasma sources; Silicon; Voltage;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.830971
Filename
830971
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