Title :
Graded gate VDMOSFET
Author :
Xu, Shuming ; Kian Paau Can ; Foo, Pang Dow ; Su, Yi ; Liu, Yong
Author_Institution :
Inst. of Microelectron., Singapore
fDate :
4/1/2000 12:00:00 AM
Abstract :
In this work, we present a novel RF VDMOSFET with graded gate structure. It can be fabricated by regrowing gate oxide after gate patterning. This structure enables a very thin gate oxide to be used in the channel region; thus a much high transconductance can be obtained. At the gate edges, the gate oxide thickness increases smoothly to about three times that of the channel region. This releases the electric field crowding at the gate edge, improving the breakdown voltage from 24 V to 68 V.
Keywords :
MOSFET; UHF field effect transistors; semiconductor device breakdown; 350 to 1000 A; 68 V; RF VDMOSFET; breakdown voltage improvement; channel region; electric field crowding; gate edge; gate oxide regrowth; gate patterning; graded gate VDMOSFET; thin gate oxide; transconductance; Breakdown voltage; Capacitance; Degradation; Fabrication; Frequency; Gallium nitride; Hafnium; Low voltage; Manufacturing; Transconductance;
Journal_Title :
Electron Device Letters, IEEE
