DocumentCode
1317481
Title
Evaluation of Transient Behavior of Polysilicon-Bound Diode for Fast ESD Applications
Author
Li, You ; Liou, Juin J.
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., Univ. of Central Florida, Orlando, FL, USA
Volume
57
Issue
10
fYear
2010
Firstpage
2736
Lastpage
2743
Abstract
Transient behaviors of poly-bound diodes subject to pulses generated by the very fast transmission line pulsing (VFTLP) tester are characterized for fast ESD events such as the charged device model. The effects of changing a diode´s dimension parameters on the transient behaviors and on the overshoot voltage and turn-on time are studied. The correlation between the diode failure and polygate configuration under the VFTLP stress is also investigated.
Keywords
electrostatic discharge; elemental semiconductors; failure analysis; semiconductor device reliability; semiconductor diodes; silicon; transient analysis; Si; VFTLP stress; charged device model; diode failure; fast ESD events; overshoot voltage; polysilicon-bound diode; transient behavior evaluation; very fast transmission line pulsing tester; Anodes; Cathodes; Electrostatic discharge; Resistance; Stress; Testing; Transient analysis; Diodes; ESD; VFTLP; transient behavior;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2010.2063032
Filename
5567140
Link To Document