An electrical method for measuring the difference bandgap across the neutral base in SiGe HBT´s

Author

Tang, Yue Teng ; Hamel, John S.

Author_Institution

Dept. of Electron. & Comput. Sci., Southampton Univ., UK

Volume

47

Issue

4

fYear

2000

fDate

4/1/2000 12:00:00 AM

Firstpage

797

Lastpage

804

Abstract

This paper describes an electrical method for measuring the bandgap difference across the neutral base of SiGe heterojunction bipolar transistors (HBT´s). It measures the effective bandgap difference due to differences in germanium concentration including the effects of heavy doping on bandgap reduction. Numerical device simulation was used to investigate the use of the proposed technique on high performance transistors with graded and uniform germanium profiles. Experimental verification of the technique is conducted on SiGe HBT devices fabricated using LPCVD

Keywords

Ge-Si alloys; energy gap; heterojunction bipolar transistors; semiconductor device measurement; semiconductor materials; Ge concentration; LPCVD fabricated devices; SiGe; SiGe HBT; bandgap grading; bandgap reduction; difference bandgap measurement; electrical method; graded Ge profiles; heavy doping; heterojunction bipolar transistors; high performance transistors; neutral base; numerical device simulation; uniform Ge profiles; Capacitance measurement; Doping profiles; Electric variables measurement; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Noise measurement; Photonic band gap; Semiconductor process modeling; Silicon germanium;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.830996

Filename

830996