Universal impurity ionization parameters in MIS C-V freeze-out characteristics and direct extraction of surface doping concentration

Author

Bouillon, Pierre ; Gwoziecki, Romain ; Skotnicki, Thomas ; Alieu, Jerome ; Gentil, Pierre

Author_Institution

Dept. of Device & Yield Eng., ST Microelectron., Crolles, France

Volume

47

Issue

4

fYear

2000

fDate

4/1/2000 12:00:00 AM

Firstpage

871

Lastpage

877

Abstract

The carrier freeze-out is responsible for a kink-effect near the flat-band voltage in MIS capacitance-voltage (C-V) characteristics. By studying this phenomenon in depth, it has been demonstrated that the flat kink situation is governed by only two universal and constant parameters. Taking advantage of this particularity, a new method has been proposed and experimentally validated, aimed at extracting directly surface doping concentrations and impurity ionization energies

Keywords

MIS structures; MOSFET; doping profiles; ionisation; In-doped NMOSFET; MIS C-V freeze-out characteristics; capacitance-voltage characteristics; constant parameters; direct extraction; flat-band voltage; impurity ionization energies; kink-effect; surface doping concentration; universal impurity ionization parameters; Capacitance; Capacitance-voltage characteristics; Doping; Helium; Ionization; MIS devices; MOSFETs; Semiconductor impurities; Temperature; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.831007

Filename

831007