DocumentCode
1317708
Title
Surface geometric effects on tunneling rates
Author
Encinosa, Mario
Author_Institution
Dept. of Phys., Florida A&M Univ., Tallahassee, FL, USA
Volume
47
Issue
4
fYear
2000
fDate
4/1/2000 12:00:00 AM
Firstpage
878
Lastpage
882
Abstract
A simple ballistic transport model is employed to investigate the effects of surface distortion on the tunneling spectrum of a model nanostructure. It is shown that constraining a particle to the curved surface of a nanostructure can have a significant influence on the tunneling spectrum of the system
Keywords
probability; quantum interference devices; resonant tunnelling devices; semiconductor device models; semiconductor quantum dots; tunnelling; ballistic transport model; distortion potentials; model nanostructure; quantum dot; surface distortion; surface geometric effects; transmission probability; tunneling rates; tunneling spectrum; Ballistic transport; Electrons; Geometry; Helium; Physics; Quantum dots; Resonant tunneling devices; Semiconductor devices; Surface waves; Two dimensional displays;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.831008
Filename
831008
Link To Document