DocumentCode :
1317708
Title :
Surface geometric effects on tunneling rates
Author :
Encinosa, Mario
Author_Institution :
Dept. of Phys., Florida A&M Univ., Tallahassee, FL, USA
Volume :
47
Issue :
4
fYear :
2000
fDate :
4/1/2000 12:00:00 AM
Firstpage :
878
Lastpage :
882
Abstract :
A simple ballistic transport model is employed to investigate the effects of surface distortion on the tunneling spectrum of a model nanostructure. It is shown that constraining a particle to the curved surface of a nanostructure can have a significant influence on the tunneling spectrum of the system
Keywords :
probability; quantum interference devices; resonant tunnelling devices; semiconductor device models; semiconductor quantum dots; tunnelling; ballistic transport model; distortion potentials; model nanostructure; quantum dot; surface distortion; surface geometric effects; transmission probability; tunneling rates; tunneling spectrum; Ballistic transport; Electrons; Geometry; Helium; Physics; Quantum dots; Resonant tunneling devices; Semiconductor devices; Surface waves; Two dimensional displays;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/16.831008
Filename :
831008
Link To Document :
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