Title :
Temperature dependent minority electron mobilities in strained Si 1-xGex (0.2⩽x⩽0.4) layers
Author :
Rieh, Jae-Sung ; Bhattacharya, Pallab K. ; Croke, Edward T.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
fDate :
4/1/2000 12:00:00 AM
Abstract :
Temperature-dependent minority electron mobilities in p-type SiGe have been measured for the first time. Measurements were made on test n-p-n SiGe-Si heterojunction bipolar transistors (HBTs) with pseudomorphic p-type Si1-xGex (0.2⩽x⩽0.4) base layers. Magnetotransport measurements were performed on the fabricated HBT´s to obtain the minority electron mobilities in the heavily B-doped base layers for temperatures ranging from 5 to 300 K. The measured minority electron mobilities exhibited sharp increase with decreasing temperature, and also showed enhancement with decreasing base Ge composition. The cutoff frequency technique was also employed to estimate the room temperature minority electron mobilities of the alloys and the results confirmed the trend in mobilities with Ge composition as determined by the magnetotransport technique
Keywords :
Ge-Si alloys; Hall mobility; electron mobility; heterojunction bipolar transistors; minority carriers; semiconductor device measurement; semiconductor materials; 5 to 300 K; SiGe-Si; base Ge composition; cutoff frequency technique; heavily B-doped base layers; heterojunction bipolar transistors; magnetotransport measurements; minority electron mobilities; n-p-n SiGe/Si HBT; p-type SiGe; pseudomorphic p-type SiGe base layers; room temperature electron mobilities; strained Si1-xGex layers; temperature dependent electron mobilities; Cutoff frequency; Electron mobility; Germanium silicon alloys; Heterojunction bipolar transistors; Performance evaluation; Silicon germanium; Temperature dependence; Temperature distribution; Testing; Time measurement;
Journal_Title :
Electron Devices, IEEE Transactions on
