DocumentCode
1317729
Title
Limitations of the modified shift-and-ratio technique for extraction of the bias dependence of Leff and Rsd of LDD MOSFETs
Author
Ahmed, Khaled ; De, Indranil ; Osburn, Carl ; Wortman, Jimmie ; Hauser, John
Author_Institution
Conexant Syst. Inc., Newport Beach, CA, USA
Volume
47
Issue
4
fYear
2000
fDate
4/1/2000 12:00:00 AM
Firstpage
891
Lastpage
893
Abstract
The purpose of this study, based on two-dimensional (2-D) simulation, was to scale effective channel length and series resistance extraction routines for sub-100 nm CMOS devices. We demonstrate that L eff- and Rsd-gate-bias dependence extracted using a modified shift-and-ratio (M-S&R) method may not give accurate results because of a nonnegligible effective mobility dependence on gate bias. Using a reasonable gate bias-dependent mobility model, one observes a finite Vg dependence of Leff and Rsd even for devices with degenerately doped drain junction
Keywords
CMOS integrated circuits; MOSFET; carrier mobility; doping profiles; electric resistance; semiconductor device models; 100 nm; 2D simulation; LDD MOSFET; bias dependence extraction; deep submicron CMOS devices; degenerately doped drain junction; effective channel length scaling; effective mobility dependence; gate bias-dependent mobility model; gate-bias dependence; lightly doped drain; modified shift-and-ratio technique; series resistance extraction routines; Charge pumps; Circuit analysis; Circuit simulation; Doping profiles; Electric variables measurement; Electrical resistance measurement; Length measurement; MOSFET circuits; Semiconductor device modeling; Two dimensional displays;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.831010
Filename
831010
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