DocumentCode
1317736
Title
A three terminal varactor for RF IC´s in standard CMOS technology
Author
Svelto, F. ; Manzini, S. ; Castello, R.
Author_Institution
Dipt. di Ingegneria, Bergamo Univ., Dalmine, Italy
Volume
47
Issue
4
fYear
2000
fDate
4/1/2000 12:00:00 AM
Firstpage
893
Lastpage
895
Abstract
A three terminal metal-oxide-silicon varactor operated between accumulation and deep depletion is proposed for RF IC´s. Prototypes, realized in a 0.35 μm standard CMOS technology, show a 3.1:1 capacitance tuning. The corresponding minimum Q is 23 at 1800 MHz. The proposed varactor lends itself as tuning element of VCO´s in highly integrated CMOS transceivers
Keywords
CMOS analogue integrated circuits; MIS devices; Q-factor; UHF integrated circuits; UHF oscillators; circuit tuning; varactors; voltage-controlled oscillators; 0.35 micron; 1800 MHz; MOS varactor; RF IC; RFIC; VCO tuning element; accumulation; capacitance tuning; deep depletion; highly integrated CMOS transceivers; standard CMOS technology; three terminal varactor; CMOS integrated circuits; CMOS technology; Circuit optimization; Degradation; Immune system; MOSFET circuits; Radio frequency; Radiofrequency integrated circuits; Tuning; Varactors;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.831011
Filename
831011
Link To Document