DocumentCode :
1317751
Title :
Theory of the single contact electron beam induced current effect
Author :
Ong, V.K.S. ; Lau, K.T. ; Ma, J.G.
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Inst., Singapore
Volume :
47
Issue :
4
fYear :
2000
fDate :
4/1/2000 12:00:00 AM
Firstpage :
897
Lastpage :
899
Abstract :
All publications on the single contact electron beam induced current (SC-EBIC) technique so far have been concerned with the application of the technique. This paper seeks to examine the theory behind the technique and supports it with experimental observation. It will be shown that the technique can be used, not only on electron and ion beam machines, but also on any scanning equipment that is capable of generating electron-hole pairs within a semiconductor device, e.g., with the use of a fine laser beam
Keywords :
EBIC; electron beam machine; electron-hole pair generation; ion beam machine; laser beam; scanning equipment; semiconductor device; single contact electron beam induced current effect; Circuits; Electromagnetics; Electron beams; Ion beams; Laser beams; Pins; Probes; Semiconductor devices; Semiconductor lasers; Shadow mapping;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/16.831013
Filename :
831013
Link To Document :
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