DocumentCode
1317751
Title
Theory of the single contact electron beam induced current effect
Author
Ong, V.K.S. ; Lau, K.T. ; Ma, J.G.
Author_Institution
Sch. of Electr. & Electron. Eng., Nanyang Technol. Inst., Singapore
Volume
47
Issue
4
fYear
2000
fDate
4/1/2000 12:00:00 AM
Firstpage
897
Lastpage
899
Abstract
All publications on the single contact electron beam induced current (SC-EBIC) technique so far have been concerned with the application of the technique. This paper seeks to examine the theory behind the technique and supports it with experimental observation. It will be shown that the technique can be used, not only on electron and ion beam machines, but also on any scanning equipment that is capable of generating electron-hole pairs within a semiconductor device, e.g., with the use of a fine laser beam
Keywords
EBIC; electron beam machine; electron-hole pair generation; ion beam machine; laser beam; scanning equipment; semiconductor device; single contact electron beam induced current effect; Circuits; Electromagnetics; Electron beams; Ion beams; Laser beams; Pins; Probes; Semiconductor devices; Semiconductor lasers; Shadow mapping;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.831013
Filename
831013
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