Title :
Enhancement in Light Extraction of GaN-Based Light-Emitting Diodes With High Reflectivity Electrodes
Author :
Su, Yan-Kuin ; Chen, Kuan Chun ; Lin, Chun-Liang ; Hsu, Hsiao-Chiu
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Abstract :
In GaN-based light-emitting diodes (LEDs), using gold-based metals to serve as electrodes, light absorption is a problem that severely restricts the light extraction in LEDs. This study demonstrates the GaN-based LEDs with high reflectivity metals (Ag/Pt) onto an n-type GaN surface and transparent contact layer (indium-tin-oxide), to serve as the n-type electrode and the p-type electrode, respectively. By replacing Cr/Au with Ag/Pt to serve as electrodes of LEDs, the light output power of the LEDs was increased by 15.7%, thereby significantly reducing the manufacturing cost of LEDs.
Keywords :
III-V semiconductors; electrodes; gallium compounds; gold; indium compounds; light absorption; light emitting diodes; platinum alloys; silver alloys; wide band gap semiconductors; Ag-Pt; GaN; ITO; LED; electrodes; high reflectivity electrode; indium-tin-oxide; light absorption; light emitting diode; light extraction enhancement; transparent contact; Current measurement; Electrodes; Gold; Light emitting diodes; Photonics; Reflectivity; GaN-based light-emitting diodes (LEDs); high reflectivity electrodes; light absorption;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2011.2167605
