Thermal dependence of HBT high-frequency performance

The effects of power dissipation and thermal resistance on device junction temperature are introduced for the first time in modelling the high-frequency performance of heterojunction bipolar transistors (HBTs). Simulated low-bias (V_cb=0 V)f_T/J_c characteristics using the proposed model are consistent with previously reported results. This model extends previous calculations to include typical high-bias operating conditions where dramatic thermal effects are demonstrated.