Silicon-on-insulator thickness determination by parametric spectral estimation

Rapidly converging parametric spectral estimators have been applied to infrared reflectograms as a nondestructive technique for the determination of silicon-on-insulator layer thicknesses. The thickness estimator has been applied to simulated reflectograms with silicon layer thickness of 50-400 nm. An accuracy of better than 6% for both the silicon and the silicon dioxide was obtained.