UIS Analysis and Characterization of the Inverted L-Shaped Source Trench Power MOSFET

Author

Ng, Jacky C W ; Sin, Johnny K O ; Sumida, Hitoshi ; Toyoda, Yoshiaki ; Ohi, Akihiko ; Tanaka, Hiroyuki ; Nishimura, Takeyoshi ; Ueno, Katsunori

Author_Institution

Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, China

Volume

58

Issue

11

fYear

2011

Firstpage

3984

Lastpage

3990

Abstract

In this paper, the unclamped inductive switching (UIS) behavior of an inverted L-shaped source trench power MOSFET is numerically analyzed and experimentally characterized. The measured avalanche energy absorption at UIS of the new trench power MOSFET is 2.1 times that of the conventional trench power MOSFET. This is explained by numerical simulation, which shows that the voltage drop across the emitter/base junction in the parasitic bipolar junction transistor of the new structure is smaller than that of the conventional structure. The influence of structural and device size variation of the new trench power MOSFET on UIS performance is also investigated. Results show that the avalanche current density at UIS is a strong function of the p⁺-region width and the device size. Furthermore, the effect becomes very significant as the device size becomes very small.

Keywords

numerical analysis; power MOSFET; UIS analysis; avalanche current density; avalanche energy absorption; emitter/base junction; inverted L-shaped source trench power MOSFET; numerical simulation; parasitic bipolar junction transistor; unclamped inductive switching behavior; voltage drop; Current density; Junctions; Logic gates; Power MOSFET; Voltage measurement; Avalanche current; avalanche ruggedness; energy absorption; trench power MOSFET; unclamped inductive switching (UIS);

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2011.2164081

Filename

6016231