DocumentCode
1318089
Title
High frequency gallium arsenide current mirror
Author
Toumazou, Christofer ; Haigh, D.G.
Author_Institution
Imperial Coll. of Sci. Technol. & Med., London, UK
Volume
26
Issue
21
fYear
1990
Firstpage
1802
Lastpage
1804
Abstract
A new negative current mirror using n-channel GaAs MESFETs is proposed. The circuit combines the advantages of linearity and good high frequency performance. Applications are as a general high speed circuit building block and for high frequency amplification.
Keywords
III-V semiconductors; Schottky gate field effect transistors; amplifiers; field effect integrated circuits; gallium arsenide; GaAs; MESFETs; high frequency amplification; high frequency performance; linearity; negative current mirror; semiconductors;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19901154
Filename
83121
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