Title :
High frequency gallium arsenide current mirror
Author :
Toumazou, Christofer ; Haigh, D.G.
Author_Institution :
Imperial Coll. of Sci. Technol. & Med., London, UK
Abstract :
A new negative current mirror using n-channel GaAs MESFETs is proposed. The circuit combines the advantages of linearity and good high frequency performance. Applications are as a general high speed circuit building block and for high frequency amplification.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; amplifiers; field effect integrated circuits; gallium arsenide; GaAs; MESFETs; high frequency amplification; high frequency performance; linearity; negative current mirror; semiconductors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19901154
