Title :
Frequency multiplication using resonant tunnelling diode with output at submillimetre wavelengths
Author :
Bouregba, R. ; Lippens, D. ; Palmateer, L. ; Bockenhoff, E. ; Bogey, M. ; Destombes, J.L. ; Lecluse, A.
Author_Institution :
Centre Hyperfrequences et Semicond., CNRS, Univ. des Sci. et Tech. de Lille Flandres Artois, Villeneuve d´´Ascq, France
Abstract :
Harmonic multiplication to a frequency of 320 GHz in resonant tunnelling diodes with 1.7 nm thick AlAs barriers is reported. These results are attributed to an unusually high current density of 2.8*105 A/cm2. The fifth harmonic output power using resonant tunnelling diodes becomes comparable with that of Schottky barrier diodes.
Keywords :
III-V semiconductors; aluminium compounds; frequency multipliers; gallium arsenide; harmonic generation; solid-state microwave circuits; solid-state microwave devices; tunnel diodes; 1.7 nm; 320 GHz; AlAs barriers; AlAs-GaAs; SMMW; THF; fifth harmonic output power; high current density; resonant tunnelling diode; sub-MM-waves; submillimetre wavelengths;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19901155
