• DocumentCode
    1318095
  • Title

    Frequency multiplication using resonant tunnelling diode with output at submillimetre wavelengths

  • Author

    Bouregba, R. ; Lippens, D. ; Palmateer, L. ; Bockenhoff, E. ; Bogey, M. ; Destombes, J.L. ; Lecluse, A.

  • Author_Institution
    Centre Hyperfrequences et Semicond., CNRS, Univ. des Sci. et Tech. de Lille Flandres Artois, Villeneuve d´´Ascq, France
  • Volume
    26
  • Issue
    21
  • fYear
    1990
  • Firstpage
    1804
  • Lastpage
    1806
  • Abstract
    Harmonic multiplication to a frequency of 320 GHz in resonant tunnelling diodes with 1.7 nm thick AlAs barriers is reported. These results are attributed to an unusually high current density of 2.8*105 A/cm2. The fifth harmonic output power using resonant tunnelling diodes becomes comparable with that of Schottky barrier diodes.
  • Keywords
    III-V semiconductors; aluminium compounds; frequency multipliers; gallium arsenide; harmonic generation; solid-state microwave circuits; solid-state microwave devices; tunnel diodes; 1.7 nm; 320 GHz; AlAs barriers; AlAs-GaAs; SMMW; THF; fifth harmonic output power; high current density; resonant tunnelling diode; sub-MM-waves; submillimetre wavelengths;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19901155
  • Filename
    83122
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1318095