Title :
Simple method to extract gate voltage dependent source/drain resistance in MOSFETs
Author :
Lee, J.I. ; Lee, Matthew B. ; Lee, Y.J. ; Han, I.K. ; Kang, K.N. ; Park, K.O.
Author_Institution :
Opt. Electron. Lab., Korea Inst. of Sci. & Technol., Seoul, South Korea
Abstract :
A simple and new method is presented and applied to a set of short channel LDD MOSFETs to extract gate-voltage dependent source/drain resistance in the linear region. The method utilises a well-known expression for the drain current in the strong inversion regime.
Keywords :
insulated gate field effect transistors; semiconductor device models; LDD FETs; MOSFETs; drain current; gate voltage dependent source/drain resistance; short channel FETs; source drain resistance extraction; strong inversion regime;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19901156
