DocumentCode :
1318111
Title :
Single quantum well edge emitting broadband LED
Author :
Mantz, J. ; Hager, Harold ; Chan, Erwin Hoi Wing ; Hong, Choong
Author_Institution :
Boeing High Technol. Center, Seattle, WA, USA
Volume :
26
Issue :
21
fYear :
1990
Firstpage :
1807
Lastpage :
1809
Abstract :
The use of a single quantum well structure in an effort to develop an edge emitting LED with an extremely broad spectral width has been studied. The device is unique in that it utilises the gain saturation effect in the quantum well structure to populate the quantised n=2 sublevel of the quantum well. The resultant device has an extremely broad output spectral width of over 95 nm (FWHM) and emits 3.2 mW at a drive current of 200 mA. The distinctive step-like spectral response exhibits two levels which can be attributed to the quantised n=1 and n=2 sublevels of the 100 AA single quantum well.
Keywords :
light emitting diodes; semiconductor quantum wells; 100 A; 200 mA; 3.2 mW; broad spectral width; broadband LED; drive current; edge emitting LED; gain saturation effect; single quantum well structure; step-like spectral response;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19901157
Filename :
83124
Link To Document :
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