DocumentCode :
1318118
Title :
Design of linear tunable CMOS differential transconductor cells
Author :
Czarnul, Z. ; Takagi, Shinichi
Author_Institution :
Dept. of Phys. Electron., Int. Co-operation Center for Sci. & Technol., Tokyo Inst. of Technol., Japan
Volume :
26
Issue :
21
fYear :
1990
Firstpage :
1809
Lastpage :
1811
Abstract :
A general method for the construction of highly-linear CMOS differential transconductor cells (DTCs) is presented. Basic assumptions which allow several tunable CMOS transconductance cells to be formed are discussed. The method is based on the simplified square-law relationship of the MOSFET transistor. Extensive SPICE simulation results with MOSFET parameters as realistic as possible confirm the theory.
Keywords :
CMOS integrated circuits; insulated gate field effect transistors; linear integrated circuits; linear network synthesis; semiconductor device models; MOSFET parameters; MOSFET transistor; SPICE simulation results; highly-linear CMOS differential transconductor cells; simplified square-law relationship; tunable CMOS differential transconductor cells;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19901158
Filename :
83125
Link To Document :
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