Title :
High power InGaAs/GaAs laser array
Author :
Dutta, N.K. ; WYNN, I.D. ; LOPATA, I. ; Sivco, D.L. ; Cho, A.Y.
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ, USA
Abstract :
The fabrication and performance characteristics of In0.2Ga0.8As/GaAs gain guided laser arrays emitting near 1 mu m are reported. The multiquantum well active region has three wells and is grown by molecular beam epitaxy. The 1 mm long lasers have a broad area threshold current density of 90 A/cm2. The estimated transparency current density per well from the measured threshold current density against cavity length data is 22 A/cm2. The ten-stripe coupled laser arrays have been operated to pulsed output powers of 4 W and CW output power of 1 W.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; semiconductor junction lasers; semiconductor quantum wells; 1 W; 1 micron; 1 mm; 4 W; CW output power; InGaAs-GaAs; fabrication; gain guided laser arrays; high power laser arrays; molecular beam epitaxy; multiquantum well active region; performance characteristics; pulsed output powers; semiconductors; ten-stripe coupled laser arrays; threshold current density;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19901162
