Title :
Fabrication of sub-50 nm poly-Si/SiO2/Si narrow wires using electron beam lithography and CF4/Q2 reactive ion etching
Author :
Tang, Y.S. ; Cheung, Ray ; Wilkinson, C.D.W.
Author_Institution :
Dept. of Electron. & Electr. Eng., Glasgow Univ., UK
Abstract :
Poly-Si/SiO2/Si narrow wires with widths of less than 50 nm were fabricated using electron beam lithography and CF4+10% O2 reactive ion etching techniques. The extraction of optimum processing parameters for obtaining wires with nearly perpendicular sidewalls is reported.
Keywords :
electron beam lithography; elemental semiconductors; semiconductor quantum wells; silicon; sputter etching; 50 nm; electron beam lithography; fabrication; narrow wires; perpendicular sidewalls; polycrystaline Si-SiO 2-Si wires; polysilicon; processing parameters; reactive ion etching; tetrafluoromethane; width;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19901166
