Title :
20 Gbit/s time-division multiplexer IC in silicon bipolar technology
Author :
Hauenschild, J. ; Rein, H.-M. ; McFarland, W. ; Doernberg, J. ; Pettengill, D.
Author_Institution :
Ruhr-Univ. Bochum, Germany
Abstract :
A high-speed 2:1 time-division multiplexer (MUX) IC has been realised in an advanced self-aligned silicon bipolar technology using 0.8 mu m lithography. The circuit can be operated up to 20 Gbit/s at 5 V supply voltage. This is by far the highest bit rate reported for a MUX in any IC technology.
Keywords :
bipolar integrated circuits; elemental semiconductors; integrated circuit technology; multiplexing equipment; silicon; time division multiplexing; 0.8 micron; 20 Gbit/s; 5 V; IC technology; MUX; Si; bipolar technology; bit rate; supply voltage; time-division multiplexer IC;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19901167
