Title :
GaInP/AlGaInP 670 nm singlemode DBR laser
Author :
Pezeshki, B. ; Osinski, J.S. ; Zhao, H. ; Mathur, A. ; Koch, T.L.
Author_Institution :
SDL Inc., San Jose, CA, USA
fDate :
11/21/1996 12:00:00 AM
Abstract :
The first singlemode room temperature AlGaInP monolithically frequency-stabilised lasers are reported. Single frequency and single spatial mode operation is obtained using a second order diffraction grating to stabilise the operating wavelength. The device produced >20 mW CW with a differential efficiency of 0.18 W/A and a sidemode suppression ratio of >30 dB
Keywords :
III-V semiconductors; aluminium compounds; diffraction gratings; distributed Bragg reflector lasers; gallium compounds; indium compounds; laser frequency stability; laser modes; semiconductor lasers; 670 nm; GaInP-AlGaInP; III-V semiconductors; differential efficiency; frequency-stabilised lasers; operating wavelength; second order diffraction grating; sidemode suppression ratio; single frequency operation; single spatial mode operation; singlemode DBR laser;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19961484
