DocumentCode
1318313
Title
GaInP/AlGaInP 670 nm singlemode DBR laser
Author
Pezeshki, B. ; Osinski, J.S. ; Zhao, H. ; Mathur, A. ; Koch, T.L.
Author_Institution
SDL Inc., San Jose, CA, USA
Volume
32
Issue
24
fYear
1996
fDate
11/21/1996 12:00:00 AM
Firstpage
2241
Lastpage
2243
Abstract
The first singlemode room temperature AlGaInP monolithically frequency-stabilised lasers are reported. Single frequency and single spatial mode operation is obtained using a second order diffraction grating to stabilise the operating wavelength. The device produced >20 mW CW with a differential efficiency of 0.18 W/A and a sidemode suppression ratio of >30 dB
Keywords
III-V semiconductors; aluminium compounds; diffraction gratings; distributed Bragg reflector lasers; gallium compounds; indium compounds; laser frequency stability; laser modes; semiconductor lasers; 670 nm; GaInP-AlGaInP; III-V semiconductors; differential efficiency; frequency-stabilised lasers; operating wavelength; second order diffraction grating; sidemode suppression ratio; single frequency operation; single spatial mode operation; singlemode DBR laser;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19961484
Filename
556790
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