• DocumentCode
    1318326
  • Title

    Room-temperature continuous-wave operation of GaInNAs/GaAs laser diode

  • Author

    Kondow, M. ; Natatsuka, S. ; Kitatani, T. ; Yazawa, Y. ; Okai, M.

  • Author_Institution
    Central Res. Lab., Hitachi Ltd., Tokyo, Japan
  • Volume
    32
  • Issue
    24
  • fYear
    1996
  • fDate
    11/21/1996 12:00:00 AM
  • Firstpage
    2244
  • Lastpage
    2245
  • Abstract
    A long-wavelength GaInNAs/GaAs quantum-well laser has been developed that operates under continuous-wave conditions at room temperature. Excellent high-temperature performance is demonstrated
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; optical communication equipment; quantum well lasers; GaInNAs-GaAs; III-V semiconductors; high-temperature performance; laser diode; long-wavelength laser; quantum-well laser; room-temperature continuous-wave operation;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19961480
  • Filename
    556792