DocumentCode :
1318326
Title :
Room-temperature continuous-wave operation of GaInNAs/GaAs laser diode
Author :
Kondow, M. ; Natatsuka, S. ; Kitatani, T. ; Yazawa, Y. ; Okai, M.
Author_Institution :
Central Res. Lab., Hitachi Ltd., Tokyo, Japan
Volume :
32
Issue :
24
fYear :
1996
fDate :
11/21/1996 12:00:00 AM
Firstpage :
2244
Lastpage :
2245
Abstract :
A long-wavelength GaInNAs/GaAs quantum-well laser has been developed that operates under continuous-wave conditions at room temperature. Excellent high-temperature performance is demonstrated
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; optical communication equipment; quantum well lasers; GaInNAs-GaAs; III-V semiconductors; high-temperature performance; laser diode; long-wavelength laser; quantum-well laser; room-temperature continuous-wave operation;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19961480
Filename :
556792
Link To Document :
بازگشت