DocumentCode
1318335
Title
Temperature compensation of the threshold current, differential efficiency, and refractive index of a GaInAs/InP MQW diode laser mounted on a bimetallic heatsink
Author
Cohen, D.A. ; Coldren, L.A.
Author_Institution
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Volume
32
Issue
24
fYear
1996
fDate
11/21/1996 12:00:00 AM
Firstpage
2245
Lastpage
2247
Abstract
The authors use stress from differential thermal expansion to provide temperature compensation of a 1.55 μm MQW laser. Over the temperature range 20-70°C, an equivalent characteristic temperature of 133 K, a reduced drop in the differential efficiency, and nearly complete elimination of the drift in modal wavelength are obtained
Keywords
III-V semiconductors; compensation; gallium arsenide; heat sinks; indium compounds; laser frequency stability; quantum well lasers; refractive index; thermal expansion; 1.55 micrometre; 20 to 70 degC; GaInAs-InP; MQW diode laser; bimetallic heatsink; differential efficiency; differential thermal expansion; equivalent characteristic temperature; modal wavelength drift; refractive index; temperature compensation; threshold current;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19961481
Filename
556793
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