Title :
Gate-drain capacitance compensation technique for triode MOS transconductors
Author :
Klumperink, Eric A. M.
Author_Institution :
Twente Univ., Fac. of Electr. Eng., Enschede, Netherlands
Abstract :
It is shown that phase errors in triode MOS transconductors due to gate-drain capacitances can largely be compensated using a crosscoupled quad of transistors with balanced input voltages. The compensation is insensitive to temperature and IC-processing variations and remains good even when the transconductance of the triode MOS transistors is varied.
Keywords :
MOS integrated circuits; capacitance; equivalent circuits; error compensation; insulated gate field effect transistors; metal-insulator-semiconductor devices; MOS transistors; balanced input voltages; capacitance compensation technique; crosscoupled quad; gate-drain capacitances; phase errors; triode MOS transconductors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19910076
