DocumentCode :
1318403
Title :
Silicon Mach-Zehnder waveguide interferometers operating at 1.3 mu m
Author :
Treyz, G.V.
Author_Institution :
IBM Res., Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
Volume :
27
Issue :
2
fYear :
1991
Firstpage :
118
Lastpage :
120
Abstract :
Mach-Zehnder waveguide interferometers have been fabricated in silicon and operation has been demonstrated at lambda =1.3 mu m. The switching mechanism is based on the thermally induced variation of the refractive index of crystalline silicon. Modulation depths of 40% were obtained for switching powers of 30 mW and switching times of 50 mu s.
Keywords :
elemental semiconductors; integrated optics; integrated optoelectronics; light interferometers; optical waveguide components; refractive index; silicon; thermo-optical effects; 1.3 micron; 30 mW; 50 mus; Mach-Zehnder waveguide interferometers; SOI material; Si; refractive index; switching mechanism; switching powers; switching times; thermally induced variation;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19910079
Filename :
83155
Link To Document :
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