• DocumentCode
    1318403
  • Title

    Silicon Mach-Zehnder waveguide interferometers operating at 1.3 mu m

  • Author

    Treyz, G.V.

  • Author_Institution
    IBM Res., Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
  • Volume
    27
  • Issue
    2
  • fYear
    1991
  • Firstpage
    118
  • Lastpage
    120
  • Abstract
    Mach-Zehnder waveguide interferometers have been fabricated in silicon and operation has been demonstrated at lambda =1.3 mu m. The switching mechanism is based on the thermally induced variation of the refractive index of crystalline silicon. Modulation depths of 40% were obtained for switching powers of 30 mW and switching times of 50 mu s.
  • Keywords
    elemental semiconductors; integrated optics; integrated optoelectronics; light interferometers; optical waveguide components; refractive index; silicon; thermo-optical effects; 1.3 micron; 30 mW; 50 mus; Mach-Zehnder waveguide interferometers; SOI material; Si; refractive index; switching mechanism; switching powers; switching times; thermally induced variation;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19910079
  • Filename
    83155