DocumentCode :
1318417
Title :
Improvement of Epitaxy GaN Quality Using Liquid-Phase Deposited Nano-Patterned Sapphire Substrates
Author :
Hsieh, Cheng-Yu ; Lin, Bo-Wen ; Cho, Hsin-Ju ; Wang, Bau-Ming ; Chang, Nancy ; Wu, Yew-Chung Sermon
Author_Institution :
Materials Science and Engineering Department, National Chiao Tung University, Hsinchu, Taiwan
Volume :
24
Issue :
24
fYear :
2012
Firstpage :
2232
Lastpage :
2234
Abstract :
A relatively simple and easy and inexpensive liquid-phase deposition (LPD) method is employed to introduce nanoscale silica hemispheres on sapphire substrates for fabricating a nano-patterned sapphire substrate (NPSS). Compared with GaN grown on sapphire without any pattern, the NPSS-GaN film is of much better quality as observed by scanning electron microscopy, transmission electron-microscopy, X-ray diffraction, cathodoluminescence, and photoluminescence. This is because GaN is initiated from the c-plane instead of the LPD-silica surface. In addition, many dislocations within the NPSS-GaN bend toward the patterns, or end at the GaN/void interfaces.
Keywords :
Films; Gallium nitride; Light emitting diodes; Nanopatterning; Nanoscale devices; Quantum wells; Substrates; Light-emitting diode (LED); nano pattern; sapphire;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2012.2224855
Filename :
6330988
Link To Document :
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