• DocumentCode
    1318454
  • Title

    Backgating reduction in MESFETs using an AlAs native oxide buffer layer

  • Author

    Bond, A.E. ; Lin, Chao-Kun ; MacDougal, M.H. ; Dapkus, P.D. ; Kaviani, K. ; Adamczyk, O. ; Nottenburg, R.

  • Author_Institution
    Dept. of Electr. Eng.-Electrophys., Univ. of Southern California, Los Angeles, CA, USA
  • Volume
    32
  • Issue
    24
  • fYear
    1996
  • fDate
    11/21/1996 12:00:00 AM
  • Firstpage
    2271
  • Lastpage
    2273
  • Abstract
    The authors present a new approach to the reduction of the backgating effect in GaAs MESFETs. A thin 1200 Å layer of the native oxide AlxOy is used in the buffer layer directly below the conducting channel and increases the backgating threshold to -17 V, while retaining excellent device characteristics
  • Keywords
    III-V semiconductors; Schottky gate field effect transistors; aluminium compounds; gallium arsenide; semiconductor technology; -17 V; 1200 angstrom; GaAs-AlO; III-V semiconductors; MESFETs; backgating reduction; conducting channel; device characteristics; native oxide buffer layer;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19961529
  • Filename
    556811
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1318454