DocumentCode
1318461
Title
Demonstration of NAND logic switching in InAs/AlSb dual-gate HFETs
Author
Dvorak, M.W. ; Bolognesi, C.R. ; Chow, D.H.
Author_Institution
Dept. of Phys., Simon Fraser Univ., Burnaby, BC, Canada
Volume
32
Issue
24
fYear
1996
fDate
11/21/1996 12:00:00 AM
Firstpage
2273
Lastpage
2274
Abstract
The authors demonstrate NAND logic switching in InAs/AlSb dual-gate heterostructure field-effect transistors (DG-HFETs). The present NAND gate prototype provides a proof-of-concept for InAs/AlSb HFETs-based small scale digital integrated circuits. With previously demonstrated cut-off frequencies of 93 GHz in 0.5 μm gate InAs/AlSb HFETs, the InAs/AlSb material system appears promising for future high-speed, low-power logic applications
Keywords
III-V semiconductors; aluminium compounds; field effect logic circuits; field effect transistors; indium compounds; logic gates; 0.5 micron; 93 GHz; III-V semiconductors; InAs-AlSb; NAND logic switching; cut-off frequencies; dual-gate HFETs; high-speed ICs; low-power logic applications; small scale digital integrated circuits;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19961526
Filename
556812
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